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SM05 THRU SM36
TVS Diode Array
PROTECTION PRODUCTS Description
The SM series of transient voltage suppressors (TVS) are designed to protect components which are connected to data and transmission lines from voltage surges caused by ESD (electrostatic discharge), EFT (electrical fast transients), and lightning. TVS diodes are characterized by their high surge capability, low operating and clamping voltages, and fast response time. This makes them ideal for use as board level protection of sensitive semiconductor components. The dual-junction common-anode design allows the user to protect one bidirectional data line or two unidirectional lines. The low profile SOT23 package allows flexibility in the design of crowded circuit boards. The SM series will meet the surge requirements of IEC 61000-4-2 (Formerly IEC 801-2), Level 4, Human Body Model for air and contact discharge.
Features
u 300 watts peak pulse power (tp = 8/20s) u Transient protection for data & power lines to
IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact) IEC 61000-4-4 (EFT) 40A (tp=5/50ns) IEC 61000-4-5 (Lightning) 12A (tp=1.2/50s) Protects one bidirectional line or two unidirectional lines Working Voltages: 5V, 12V, 15V, 24 and 36V Low clamping voltage Solid-state silicon avalanche technology
u u u u u u u u u u u u u
Mechanical Characteristics
JEDEC SOT23 package Molding compound flammability rating: UL 94V-0 Marking : Marking Code Packaging : Tape and Reel per EIA 481
Applications
Cellular Handsets and Accessories Portable Electronics Industrial Controls Set-Top Box Servers, Notebook, and Desktop PC
Circuit Diagram
Schematic & PIN Configuration
SOT23 (Top View)
Revision 9/2000 1 www.semtech.com
SM05 THRU SM36
PROTECTION PRODUCTS Absolute Maximum Rating
R ating Peak Pulse Pow er (tp = 8/20 s) Th ermal Resistance, Junction to A mb ient Lead Sold ering Temp erature Op erating Temp erature Storage Temp erature Symbo l Pp k qJA TL TJ TSTG Value 300 556 260 (10 sec.) -55 to +125 -55 to +150 Units Watts C/W C C C
Electrical Characteristics
SM05 Par ame te r Reverse Stand -Off Voltage Reverse Breakd ow n Voltage Reverse Leakage Current Clamp ing Voltage Maximum Peak Pulse Current Junction Cap acitance Junction Cap acitance Symbo l V RWM V BR IR VC Ip p Cj Cj It = 1mA V RWM = 5V, T=25C IPP = 1A , tp = 8/20 s tp = 8/20 s Pi n 1 t o 2 V R = 0V, f = 1MHz Pin 1 to 3 and Pi n 2 t o 3 V R = 0V, f = 1MHz 6 20 9.8 17 350 400 Co nd itio ns Minimum Typ ical Maximum 5 Units V V A V A pF pF
SM12 Par ame te r Reverse Stand -Off Voltage Reverse Breakd ow n Voltage Reverse Leakage Current Clamp ing Voltage Maximum Peak Pulse Current Junction Cap acitance Junction Cap acitance Symbo l V RWM V BR IR VC Ip p Cj Cj It = 1mA V RWM = 12V, T=25C IPP = 1A , tp = 8/20 s tp = 8/20 s Pi n 1 t o 2 V R = 0V, f = 1MHz Pin 1 to 3 and Pi n 2 t o 3 V R = 0V, f = 1MHz 13.3 1 19 12 120 150 Co nd itio ns Minimum Typ ical Maximum 12 Units V V A V A pF pF
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SM05 THRU SM36
PROTECTION PRODUCTS Electrical Characteristics (Continued)
SM15 Par ame te r Reverse Stand -Off Voltage Reverse Breakd ow n Voltage Reverse Leakage Current Clamp ing Voltage Maximum Peak Pulse Current Junction Cap acitance Junction Cap acitance
SM24 Par ame te r Reverse Stand -Off Voltage Reverse Breakd ow n Voltage Reverse Leakage Current Clamp ing Voltage Maximum Peak Pulse Current Junction Cap acitance Junction Cap acitance Symbo l V RWM V BR IR VC Ip p Cj Cj It = 1mA V RWM = 24V, T=25C IPP = 1A , tp = 8/20 s tp = 8/20 s Pi n 1 t o 2 V R = 0V, f = 1MHz Pin 1 to 3 and 2 to 3 V R = 0V, f = 1MHz 26.7 1 43 5 50 60 Co nd itio ns Minimum Typ ical Maximum 24 Units V V A V A pF pF
Symbo l VRWM V BR IR VC Ip p Cj Cj
Co nd itio ns
Minimum
Typ ical
Maximum 15
Units V V
It = 1mA V RWM = 15V, T=25C IPP = 1A , tp = 8/20 s tp = 8/20 s Pi n 1 t o 2 V R = 0V, f = 1MHz Pin 1 to 3 and 2 to 3 V R = 0V, f = 1MHz
16.7 1 24 10 75 100
A V A pF pF
SM36 Par ame te r Reverse Stand -Off Voltage Reverse Breakd ow n Voltage Reverse Leakage Current Clamp ing Voltage Maximum Peak Pulse Current Junction Cap acitance Junction Cap acitance
a 2000 Semtech Corp.
Symbo l VRWM V BR IR VC Ip p Cj Cj
Co nd itio ns
Minimum
Typ ical
Maximum 36
Units V V
It = 1mA V RWM = 36V, T=25C IPP = 1A , tp = 8/20 s tp = 8/20 s Pi n 1 t o 2 V R = 0V, f = 1MHz Pin 1 to 3 and 2 to 3 V R = 0V, f = 1MHz
3
40 1 60 4 40 45
A V A pF pF
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SM05 THRU SM36
PROTECTION PRODUCTS Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
10
110 100
Power Derating Curve
Peak Pulse Power - PPP (kW)
90 % of Rated Power or I PP 80 70 60 50 40 30 20 10 0
1
0.1
0.01 0.1 1 10 Pulse Duration - tp (s) 100 1000
0
25
50
75
100
125
150
Ambient Temperature - TA (oC)
Pulse Waveform
110 100 90 80 Percent of IPP 70 60 50 40 30 20 10 0 0 5 10 15 Time (s) 20 25 30 td = IPP/2 e
-t
Waveform Parameters: tr = 8s td = 20s
ESD Pulse Waveform (Per IEC 61000-4-2)
Level
IEC 61000-4-2 Discharge Parameters
First Peak Current (A) 1 2 3 4 7.5 15 22.5 30 Peak Current at 30 ns (A) 4 8 12 16 Peak Current at 60 ns (A) 8 4 6 8 Test Test Voltage Voltage (Contact ( A ir Disch arge) Disch arge) (kV ) (kV ) 2 4 6 8 2 4 8 15
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SM05 THRU SM36
PROTECTION PRODUCTS Applications Information
Device Connection Options The SM series is designed to protect one bidirectional or two unidirectional data or I/O lines operating at 5 to 36 volts. Connection options are as follows:
l
Device Schematic & Pin Configuration
l
Bidirectional: Pin 1 is connected to the data line and pin 2 is connected to ground (Since the device is symmetrical, these connections may be reversed). For best results, the ground connection should be made directly to a ground plane on the board. The path length should be kept as short as possible to minimize parasitic inductance. Pin 3 is not connected. Unidirectional: Data lines are connected to pin 1 and pin 2. Pin 3 is connected to ground. For best results, this pin should be connected directly to a ground plane on the board. The path length should be kept as short as possible to minimize parasitic inductance.
RS-232 Transceiver Protection Example
Circuit Board Layout Recommendations for Suppression of ESD. Good circuit board layout is critical for the suppression of fast rise-time transients such as ESD. The following guidelines are recommended (Refer to application note SI99-01 for more detailed information):
l l l l l l
Place the TVS near the input terminals or connectors to restrict transient coupling. Minimize the path length between the TVS and the protected line. Minimize all conductive loops including power and ground loops. The ESD transient return path to ground should be kept as short as possible. Never run critical signals near board edges. Use ground planes whenever possible.
a 2000 Semtech Corp.
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SM05 THRU SM36
PROTECTION PRODUCTS Outline Drawing - SOT23
Land Pattern - SOT23
Note 1 : Grid placement courtyard is 8 x 8 elements (4mm x 4mm) in accordance with the international grid detailed in IEC Publication 97.
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SM05 THRU SM36
PROTECTION PRODUCTS Marking Codes
Par t Numbe r SM05 SM12 SM15 SM24 SM36 Mar king Co d e M05 M12 M15 M24 M36
Ordering Information
Par t Numbe r SM05.TC SM05.TG SM12.TC SM12.TG SM15.TC SM15.TG SM24.TC SM24.TG SM36.TC Wo r king Vo ltage 5V 5V 12V 12V 15V 15V 24V 24V 36V Qty p e r R e e l 3,000 10,000 3,000 10,000 3,000 10,000 3,000 10,000 3,000 R e e l Size 7 Inch 13 Inch 7 Inch 13 Inch 7 Inch 13 Inch 7 Inch 13 Inch 7 Inch
Contact Information
Semtech Corporation Protection Products Division 652 Mitchell Rd., Newbury Park, CA 91320 Phone: (805)498-2111 FAX (805)498-3804
a 2000 Semtech Corp. 7 www.semtech.com

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